Mesa, AZ, United States of America

Ronald A Ruechner

This inventor holds 1 USPTO granted patent. Top assignee: Arizona State University. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald A Ruechner. Retrieved from https://idiyas.com/inventor/ronald-a-ruechner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 124(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ronald A Ruechner

Introduction

Ronald A Ruechner is a notable inventor based in Mesa, AZ (US). He has made significant contributions to the field of semiconductor technology. His work focuses on the means and methods of lifting and relocating epitaxial device layers.

Latest Patents

Ronald A Ruechner holds a patent titled "Means and methods of lifting and relocating an epitaxial device layer." This patent addresses the separation of large area semiconductor epitaxial device layers from their substrates. It also covers the transfer of the grown epitaxial layers to a new host substrate, ensuring proper alignment with the features of the new host. Additionally, it discusses the reuse of the original substrate, showcasing innovative approaches in semiconductor manufacturing.

Career Highlights

Ronald A Ruechner is affiliated with Arizona State University, where he contributes to research and development in semiconductor technologies. His expertise and innovative mindset have positioned him as a valuable asset in his field.

Collaborations

He has collaborated with notable colleagues, including George N Maracas and Donald S Gerber, further enhancing the impact of his work in the semiconductor industry.

Conclusion

Ronald A Ruechner's contributions to semiconductor technology through his patent and work at Arizona State University highlight his role as an influential inventor. His innovative methods continue to advance the field and inspire future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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