Company Filing History:
Years Active: 2005
Title: Innovations by Ronald A. Pierce in Lithographic Processing
Introduction
Ronald A. Pierce is an accomplished inventor based in Richmond, Vermont, known for his significant contributions to the field of lithographic processing. With a focus on enhancing measurement techniques, he has developed innovative methods that streamline critical dimension analysis.
Latest Patents
Ronald A. Pierce holds a patent for "Methods for critical dimension and focus mapping using critical dimension test marks." This patent describes methods for using critical dimension test marks to rapidly determine the optimal focus position of lithographic processing equipment. The invention allows for critical dimension measurement analysis across a wafer's surface, significantly improving the efficiency of the measurement process. By distributing a plurality of test mark arrays across the wafer's surface, the best focus position can be determined through the measurement of the length or area of the resultant test marks. This method enables the measurement of hundreds of values across a wafer in just thirty minutes, compared to the five hours required for comparable measurements using a Scanning Electron Microscope (SEM).
Career Highlights
Ronald A. Pierce is currently employed at Nikon Precision Incorporated, where he continues to innovate in the field of lithography. His work has been instrumental in advancing the accuracy and repeatability of critical dimension measurements, which are essential for the semiconductor manufacturing process.
Collaborations
Throughout his career, Ronald has collaborated with notable colleagues, including Frank C. Leung and Etsuya Morita. These collaborations have further enriched his contributions to the field and have fostered advancements in lithographic technology.
Conclusion
Ronald A. Pierce's innovative methods for critical dimension and focus mapping have made a significant impact on lithographic processing. His work not only enhances measurement efficiency but also contributes to the overall accuracy of semiconductor manufacturing.