Chandler, AZ, United States of America

Ron Bowman

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Other. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ron Bowman. Retrieved from https://idiyas.com/inventor/ron-bowman-f8jabuy0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:

goldMedal3 out of 834,601 
Other
 patents

Years Active: 2021-2026

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3 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Ron Bowman from Chandler, AZ**

Introduction

Ron Bowman is an inventive mind hailing from Chandler, Arizona. With two patents to his name, he has made significant contributions in the field of semiconductor technology. His innovative approach focuses on enhancing material properties through advanced engineering techniques.

Latest Patents

One of Ron Bowman's notable patents is the "Silicon-on-insulator substrate including trap-rich layer and methods for making thereof." This patent outlines a sophisticated silicon-on-insulator (SOI) substrate that comprises several key layers. Firstly, it features a high-resistivity base layer made of silicon with a trap-rich region containing arsenic, specifically diffused within the first side of this base layer. The trap-rich region has a thickness ranging from 1 to 10 microns and a trap density between 0.8 × 10^cm/eV to 1.2 × 10^cm/eV. Additionally, the high-resistivity base layer has a resistivity between 50 to 100 ohm-meters and a thickness ranging from 500 to 700 microns.

Moreover, the substrate includes a silicon dioxide layer on the first side of the high-resistivity base layer, with a thickness ranging from 1000 to 5000 angstroms. Lastly, it comprises a transfer layer positioned atop the silicon dioxide layer, which consists of a silicon wafer with a thickness ranging from 500 to 5000 angstroms. This innovative design is aimed at improving the performance and efficiency of semiconductor devices.

Career Highlights

Throughout his career, Ron Bowman has demonstrated a commitment to advancing semiconductor technology through his research and development efforts. His work has not only garnered patents but also recognition within the industry for its impact and potential applications in various technological realms.

Collaborations

In his innovative journey, Ron collaborates with esteemed professionals, including his coworker Mark Franklin. Together, they aim to push the boundaries of what is possible in semiconductor technology, contributing to the evolution of devices that rely on advanced materials and structures.

Conclusion

Ron Bowman's innovative contributions to the field of semiconductor technology are commendable and demonstrate his dedication to scientific advancement. With his patented inventions and ongoing collaborations, he continues to make strides that may revolutionize the way we understand and utilize semiconductor materials in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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