Aix-en-Provence, France

Romeric Gay

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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3 patents (USPTO):Explore Patents

Title: Innovations of Inventor Romeric Gay in Integrated Circuit Technology

Introduction

Romeric Gay, an accomplished inventor based in Aix-en-Provence, France, is recognized for his impactful contributions to the field of integrated circuit technology. With a total of three patents to his name, Gay has made significant strides in enhancing the functionality and efficiency of electronic devices.

Latest Patents

One of Romeric Gay's latest patents focuses on an integrated circuit comprising at least one bipolar transistor and a corresponding method of production. This innovative bipolar transistor features a common collector region that includes a buried semiconductor layer and an annular well. Within this design, a well region is surrounded by the annular well and is delimited by the buried semiconductor layer. The transistor is structured with a first base region and a second base region formed by the well region, separated by a vertical gate structure. This configuration allows for a first emitter region in the first base region and a second emitter region in the second base region, effectively configuring the bipolar transistor as a Darlington-type device. Notably, the structures of this bipolar transistor may also be fabricated in conjunction with a non-volatile memory cell.

Another of his recent inventions is a triple-gate MOS transistor and the method for its manufacture. This design begins with a semiconductor substrate containing an active region, laterally surrounded by electrically isolating regions. Trenches are etched on either side of the active region to create a channel for the transistor. The process involves depositing an electrically isolating layer on the internal surface of each trench and filling them with a semiconductive or electrically conductive material. Vertical gates are formed on opposite sides of the channel through this process. Additionally, a horizontal gate for the transistor is created by depositing at least one semiconductive or electrically conductive material on the isolating layer at the upper surface of the active region.

Career Highlights

Romeric Gay is currently employed at STMicroelectronics (Rousset) Sas, a leading company in semiconductor and integrated circuit products. His expertise in developing innovative transistor structures has positioned him as a significant contributor in advancing the technology used in electronic devices.

Collaborations

During his career, Romeric Gay has worked alongside talented professionals, including his coworker Abderrezak Marzaki. Collaborating with skilled individuals has enabled him to enhance his inventions further and contribute to the rich field of integrated circuit technology.

Conclusion

In conclusion, Romeric Gay is a notable inventor whose work in integrated circuits has redefined certain technological parameters in the electronics industry. With three patents to his name, his contributions continue to influence the design and efficiency of both bipolar and MOS transistors. As innovations in this field progress, inventors like Gay play a crucial role in shaping the future of electronic devices.

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