Company Filing History:
Years Active: 2020
Title: The Innovations of Roland Sorge
Introduction
Roland Sorge is a notable inventor based in Frankfurt-am-Main, Germany. He has made significant contributions to the field of microelectronics, particularly in the development of advanced transistor technologies. His work focuses on creating innovative solutions that enhance the performance and reliability of electronic circuits.
Latest Patents
One of Roland Sorge's key patents is for a MOS transistor designed for radiation-tolerant digital CMOS circuits. This invention involves a monolithically integrated MOS transistor that includes a doped well region of a first conductivity type. The active MOS transistor region is formed within this well region and comprises doped source and drain regions of a second conductivity type. The design features at least one MOS channel region that extends between the source and drain regions under a respective gate stack. Additionally, a dielectric isolation layer of the STI or LOCOS type surrounds the transistor, ensuring optimal performance in challenging environments.
Career Highlights
Roland Sorge is associated with IHP GmbH - Innovations for High-Performance Microelectronics, which is part of the Leibniz Institute for Innovative Microelectronics. His role at this esteemed institution allows him to collaborate with other experts in the field and contribute to cutting-edge research and development projects. His work has led to advancements in the design and functionality of microelectronic devices.
Collaborations
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Conclusion
Roland Sorge's contributions to the field of microelectronics, particularly through his innovative MOS transistor patent, highlight his expertise and commitment to advancing technology. His work continues to influence the development of radiation-tolerant digital circuits, showcasing the importance of innovation in this critical area.