Company Filing History:
Years Active: 2017
Title: Celebrating Roksana Golizadeh Mojard: Innovator in Magnetic Memory Technologies
Introduction: Roksana Golizadeh Mojard is a prominent inventor based in San Jose, California. With her innovative spirit and research efforts, she has made significant contributions to the field of magnetic memory technology. Her work aims to enhance device performance and efficiency, showcasing her technical expertise and dedication to advancing technology.
Latest Patents: Roksana holds a patent titled "Method for reducing size and center positioning of magnetic memory element contacts." This method focuses on centering a contact on a layer of a magnetic memory device. In one embodiment, a spacer is created in an opening surrounding the upper layer, and the contact is formed within this spacer. The spacer is made from an anisotropically etched conformal layer that is deposited on the upper surface and into the opening, demonstrating a novel approach to improve device functionality.
Career Highlights: Roksana is currently associated with Intel Corporation, where she contributes her expertise in technology and innovation. During her tenure at Intel, she has developed solutions that address complex challenges within the realm of magnetic memory, solidifying her reputation as a skilled engineer and inventor.
Collaborations: Roksana has collaborated with notable colleagues, including Brian S. Doyle and Yong Ju Lee. These partnerships reflect her ability to work effectively within a team, fostering innovation through shared knowledge and skills.
Conclusion: Roksana Golizadeh Mojard exemplifies the spirit of innovation in the tech industry. Her contributions, particularly through her patented method, signify a leap forward in magnetic memory technology. As she continues her work at Intel Corporation, the impact of her inventions will undoubtedly inspire future advancements in the field.