San Jose, CA, United States of America

Rohan Dhekane


Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2020

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2 patents (USPTO):Explore Patents

Title: Rohan Dhekane: Innovator in Non-Volatile Memory Technology

Introduction

Rohan Dhekane is a prominent inventor based in San Jose, CA, specializing in non-volatile memory technology. He has made significant contributions to the field, holding 2 patents that address critical issues in memory storage systems. His work is instrumental in enhancing the reliability and efficiency of memory devices.

Latest Patents

Dhekane's latest patents include innovative solutions for identifying faulty memory dies and detecting faulty memory blocks. One of his patents, titled "System countermeasure for read operation during TLC program suspend causing ADL data reset with XDL data," outlines methods for programming multi-state blocks in memory dies. This involves populating transfer data latches with data sets, performing read operations, and identifying faulty dies based on comparison results. Another patent focuses on detecting faulty memory blocks by analyzing failed bit counts and implementing confirmation processes to ensure data integrity.

Career Highlights

Rohan Dhekane is currently employed at Western Digital Technologies, Inc., where he continues to push the boundaries of memory technology. His expertise in non-volatile memory systems has made him a valuable asset to the company. Dhekane's innovative approaches have contributed to advancements in memory reliability and performance.

Collaborations

Throughout his career, Dhekane has collaborated with talented individuals such as Mahim Raj Gupta and Aaron Lee. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Rohan Dhekane's contributions to non-volatile memory technology exemplify his dedication to innovation and excellence. His patents not only address current challenges in the field but also pave the way for future advancements in memory storage systems.

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