This inventor holds 3 USPTO granted patents. Top assignee: Integrated Device Technology, Inc.. Active years: 1995-1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1995-1999
Title: Robin H Hodge: Innovator in Integrated Circuit Technology
Introduction
Robin H Hodge is a notable inventor based in Portola Valley, California. He has made significant contributions to the field of integrated circuit technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of packaged integrated circuits.
Latest Patents
One of Hodge's latest patents involves a packaged integrated circuit that features thermal enhancement and reduced heat generation. This innovative design includes a lid attached to a base, enclosing a cavity where integrated circuit chips are placed. The chips that generate the most heat are attached to the lid, which is made from materials with excellent thermal conductivity, such as aluminum nitride. This configuration allows for a higher density of interconnections, as connection pins or solder balls can be formed over the entire exterior surface of the base. Additionally, this design enables testing of the chips attached to the lid before they are committed to the base, allowing for the discarding of defective chips without wasting the expensive base.
Career Highlights
Hodge is currently employed at Integrated Device Technology, Inc., where he continues to innovate in the field of integrated circuits. His work has contributed to advancements in electronic functions and efficiency in circuit design.
Collaborations
Hodge collaborates with Thomas H Templeton, Jr., who is also a key figure in the development of integrated circuit technologies.
Conclusion
Robin H Hodge's contributions to integrated circuit technology demonstrate his commitment to innovation and efficiency in electronic design. His patents reflect a deep understanding of thermal management and interconnection density, making him a valuable asset in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile