This inventor holds 1 USPTO granted patent. Top assignee: California Institute of Technology. Active years: 1994.
Company Filing History:
Years Active: 1994
Title: The Innovations of Robert W. Terhune
Introduction
Robert W. Terhune is a notable inventor based in Pasadena, CA. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced charge-coupled devices (CCDs). His innovative work has led to the enhancement of ultraviolet detection capabilities in these devices.
Latest Patents
One of Terhune's key patents is titled "Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet." This patent describes a method for confining the backside surface potential well of a backside-illuminated CCD to within about half a nanometer of the surface. By utilizing molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface, Terhune achieved an extremely sharp dopant profile. This profile is created by temporarily interrupting the evaporated silicon source during MBE growth while maintaining the evaporated p+ dopant source, such as boron. The result is an electric field strong enough to confine the backside surface potential well, leading to nearly 100% internal quantum efficiency throughout the UV wavelength range.
Career Highlights
Terhune's career has been marked by his dedication to advancing semiconductor technology. His work at the California Institute of Technology has positioned him as a leader in the field. He has focused on improving the performance and efficiency of CCDs, which are critical components in various imaging applications.
Collaborations
Throughout his career, Terhune has collaborated with esteemed colleagues, including Frank J. Grunthaner and Michael E. Hoenk. These collaborations have further enriched his research and contributed to the development of innovative technologies in the semiconductor industry.
Conclusion
Robert W. Terhune's contributions to the field of semiconductor technology, particularly through his patent on delta-doped layers for CCDs, have significantly advanced the capabilities of ultraviolet detection. His work continues to influence the development of high-performance imaging devices.