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For the Inventor, By the Inventor

Garland, TX, United States of America

Robert T Bate

This inventor holds 12 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1976-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert T Bate. Retrieved from https://idiyas.com/inventor/robert-t-bate

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 10

Forward Citations = 231(Granted Patents)


Location History:

  • Richardson, TX (US) (1976 - 1978)
  • Garland, TX (US) (1979 - 1992)

Company Filing History:

goldMedal12 out of 29,888 
 
Texas Instruments Corporation
 patents

Years Active: 1976-1992

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12 patents (USPTO):Explore Patents
1. 5147817 - Method for forming programmable resistive element (1992-09-15),
2. 5032877 - Quantum-coupled ROM (1991-07-16),
3. 4912531 - Three-terminal quantum device (1990-03-27),
4. 4783427 - Process for fabricating quantum-well devices (1988-11-08),
5. 4575924 - Process for fabricating quantum-well devices utilizing etch and refill (1986-03-18),
6. 4360900 - Non-volatile semiconductor memory elements (1982-11-23),
7. 4288470 - Method of making non-volatile semiconductor memory elements having (1981-09-08),
8. 4250206 - Method of making non-volatile semiconductor memory elements (1981-02-10),
9. 4242737 - Non-volatile semiconductor memory elements (1980-12-30),
10. 4141026 - Hall effect generator (1979-02-20),
11. 4072977 - Read only memory utilizing charge coupled device structures (1978-02-07),
12. 3979604 - Infrared charge-coupled imager (1976-09-07),

Title: The Innovative Contributions of Robert T. Bate

Introduction

Robert T. Bate is a prominent inventor based in Garland, TX (US), known for his significant contributions to the field of technology. With a total of 12 patents to his name, Bate has made remarkable advancements, particularly in programmable resistive elements and quantum-coupled read-only memory.

Latest Patents

One of Bate's latest patents is a method for forming a programmable resistive element. This invention includes a channel comprising a layer of gallium arsenide, with a programming barrier disposed outwardly from the channel. Additionally, a storage gate made of intrinsic gallium arsenide is positioned outwardly from the programming barrier, followed by an insulator layer of aluminum-gallium-arsenide. Finally, a control gate is placed outwardly from the insulator, with first and second spaced apart contacts that interact with the channel. Another notable patent is for a quantum-coupled read-only memory, where information is encoded in the pattern of coupling of column lines to changes in quantum-coupled wells linked by resonant tunneling. This design allows for a very high row density due to the close packing of quantum wells.

Career Highlights

Bate has had a distinguished career at Texas Instruments Corporation, where he has been instrumental in developing cutting-edge technologies. His work has not only advanced the company's objectives but has also contributed to the broader field of electronics and memory storage solutions.

Collaborations

Throughout his career, Bate has collaborated with notable colleagues, including Mark A. Reed and Henry B. Morris. These partnerships have fostered innovation and have led to the successful development of various technologies.

Conclusion

Robert T. Bate's innovative work and numerous patents highlight his significant impact on technology and electronics. His contributions continue to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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