Company Filing History:
Years Active: 1985-1986
Title: Innovations of Robert P. Love
Introduction
Robert P. Love is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on methods that enhance the performance and manufacturing processes of power MOSFETs and related devices.
Latest Patents
Among his latest patents are methods for making self-aligned power MOSFETs with integral source-base and double diffused power MOSFETs. These innovations address the challenges associated with parasitic bipolar transistors in double diffused power MOSFETs. The patents detail techniques for creating ohmic shorts between the source and base regions, which are crucial for improving device performance. One method involves depositing a metallic electrode, preferably aluminum, over the source region, with microalloy spikes extending into the base region. Another method utilizes a V-groove formed by preferential etching, allowing for effective contact between the source and base regions.
Career Highlights
Robert P. Love has spent a significant part of his career at General Electric Company, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to the development of vertical channel field-controlled devices, which include features that simplify the fabrication process and enhance device efficiency.
Collaborations
Throughout his career, Robert has collaborated with esteemed colleagues such as Bantval J. Baliga and Peter V. Gray. These partnerships have fostered a collaborative environment that has contributed to the advancement of semiconductor technology.
Conclusion
Robert P. Love's contributions to the field of semiconductor technology through his patents and innovative methods have significantly impacted the industry. His work continues to influence the development of more efficient and effective electronic devices.