Robert Edgeworth

Title: The Innovations of Robert Edgeworth

Introduction

Robert Edgeworth is a notable inventor based in Phoenix, Arizona. He has made significant contributions to the field of semiconductor technology, particularly in the area of through-silicon vias (TSVs). His work focuses on improving the reliability and performance of three-dimensional integrated circuits.

Latest Patents

Edgeworth holds a patent for a process and material designed to prevent deleterious expansion of high aspect ratio copper filled through silicon vias. This innovative technique involves the use of negative thermal expansion (NTE) materials such as zirconium tungstate or hafnium tungstate. By strategically placing the NTE material between the substrate and conductive core material of the TSV, Edgeworth's invention addresses the coefficient of thermal expansion mismatch, thereby reducing heat-induced stresses and enhancing the overall reliability of TSVs.

Career Highlights

Edgeworth is currently employed at Intel Corporation, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise in TSV technology has positioned him as a key player in advancing three-dimensional integration techniques.

Collaborations

Throughout his career, Edgeworth has collaborated with esteemed colleagues such as Paul A. Zimmerman and Scott Bruce Clendenning. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor industry.

Conclusion

Robert Edgeworth's contributions to the field of semiconductor technology, particularly through his innovative patent on TSVs, highlight his role as a significant inventor. His work not only enhances the performance of integrated circuits but also paves the way for future advancements in the industry.