This inventor holds 1 USPTO granted patent. Top assignee: Spire Corporation. Active years: 1986.
Company Filing History:
Years Active: 1986
Title: The Innovative Contributions of Robert D. Evans
Introduction
Robert D. Evans is a notable inventor based in Bedford, MA (US). He has made significant contributions to the field of X-ray lithography through his innovative patent. His work focuses on optimizing the quality and growth rate of membranes used in X-ray mask blanks.
Latest Patents
Robert D. Evans holds a patent for an improved process known as the X-ray mask blank process. This process enhances the quality and growth rate of membranes by allowing independent control of residual stress. The method involves several steps, including providing a mounting fixture, cooling a low-cost substrate material, and depositing a thin membrane using a low-temperature plasma-enhanced method. The substrate is then removed, allowing it to thermally expand, which helps the membrane acquire optimum tensile stress. The preferred substrate material is low-grade industrial silicon, while the membrane can be formed from various materials, including boron nitride and silicon carbide.
Career Highlights
Evans is associated with Spire Corporation, where he has contributed to advancements in technology related to X-ray lithography. His expertise in the field has positioned him as a valuable asset to the company and the industry.
Collaborations
One of his notable coworkers is Ward D. Halverson, with whom he has likely collaborated on various projects within the realm of X-ray technology.
Conclusion
Robert D. Evans is a distinguished inventor whose work in the X-ray mask blank process has made a significant impact on the field of lithography. His innovative approach continues to influence advancements in technology.