This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1995.
Company Filing History:
Years Active: 1995
Title: Innovations by Robert D Bailey in Metal Silicide Formation
Introduction
Robert D Bailey is an accomplished inventor based in South Burlington, VT (US). He has made significant contributions to the field of integrated circuit devices, particularly through his innovative patent related to metal silicide formation.
Latest Patents
Robert D Bailey holds a patent for a "Method of metal silicide formation in integrated circuit devices." This patent describes an improved process for the formation of high-quality, high-yield platinum silicides on silicon wafers. The method utilizes a post-sputter platinum deposition and high vacuum bake to complete the first step of the silicide reaction, resulting in the formation of Pt₂Si before sintering. The process includes a sintering step at temperatures ranging from 500°C to 900°C. The high vacuum bake allows for precise control of O₂ and H₂O impurities, making it a versatile solution that can be performed in existing tools.
Career Highlights
Robert D Bailey is associated with the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His work has been pivotal in enhancing the efficiency and quality of integrated circuits.
Collaborations
Some of his notable coworkers include James M Harper and Cyril Cabral, Jr. Their collaboration has likely fostered an environment of innovation and technical excellence within their projects.
Conclusion
Robert D Bailey's contributions to the field of integrated circuit devices through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the semiconductor industry positively.