Company Filing History:
Years Active: 2005
Title: The Innovations of Robert D. Armitage
Introduction
Robert D. Armitage is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of materials science, particularly in the growth of Gallium Nitride (GaN) on silicon substrates. His work has implications for various applications in electronics and optoelectronics.
Latest Patents
One of Robert D. Armitage's key patents is titled "Hafnium nitride buffer layers for growth of GaN on silicon." This patent describes a method where Gallium Nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. The resulting Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, achieving crack-free thicknesses of up to 1.2 micrometers. Notably, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
Career Highlights
Robert D. Armitage is affiliated with the University of California, where he continues to advance research in semiconductor materials. His innovative approaches have garnered attention in the scientific community, contributing to the understanding of GaN growth techniques.
Collaborations
One of his notable collaborators is Eicke R. Weber, with whom he has worked on various research projects related to semiconductor materials and their applications.
Conclusion
Robert D. Armitage's contributions to the field of materials science, particularly through his patent on hafnium nitride buffer layers, highlight his role as an influential inventor. His work continues to pave the way for advancements in semiconductor technology.