The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
May. 16, 2003
Applicants:
Robert D. Armitage, Kyoto, JP;
Eicke R. Weber, Piedmont, CA (US);
Inventors:
Robert D. Armitage, Kyoto, JP;
Eicke R. Weber, Piedmont, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B21D039/00 ; B32B015/04 ;
U.S. Cl.
CPC ...
Abstract
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
Quick Actions:
Armitage, Robert. (2005). Hafnium nitride buffer layers for growth of gan on silicon (U.S. Patent No. 6929867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6929867
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile