Bronx, NY, United States of America

Robert C McIntosh

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1984-1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert C McIntosh. Retrieved from https://idiyas.com/inventor/robert-c-mcintosh-m7v4pm7q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Brewster, NY (US) (1984)
  • Bronx, NY (US) (1993)

Company Filing History:


Years Active: 1984-1993

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2 patents (USPTO):Explore Patents

Title: The Innovations of Robert C. McIntosh

Introduction

Robert C. McIntosh is a notable inventor based in the Bronx, NY. He has made significant contributions to the field of chemical vapor deposition and photolithography. With a total of 2 patents to his name, McIntosh continues to push the boundaries of technology.

Latest Patents

One of his latest patents is titled "High-throughput, low-temperature process for depositing oxides." This invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. The process involves a pre-cleaning step to remove impurities from the substrate, followed by a LPCVD step performed at temperatures between 200°C and 300°C. This innovative method aims to replace higher temperature LPCVD and thermal processes for depositing silicon dioxide. The substrate undergoes a cleaning process, is treated with a dilute hydrofluoric acid solution, and is then rinsed to remove any residues. Finally, a layer of silicon dioxide is deposited using a low-pressure chemical vapor deposition process, achieving oxide qualities comparable to thermally grown oxides.

Another significant patent is the "Method for dose calculation of photolithography projection printers." This process sets the exposure speed of photolithography instruments using a dosimetry method based on photoactive compound bleaching of photoresist. It involves determining a curve of light absorbance to exposure speed and a calibration curve of light absorbance to dose for a photoresist. The exposure speed can be adjusted for any desired degree of resist bleaching, ensuring precision in photolithography applications.

Career Highlights

Robert C. McIntosh is currently employed at International Business Machines Corporation (IBM), where he continues to innovate and develop new technologies. His work has had a lasting impact on the fields of semiconductor manufacturing and photolithography.

Collaborations

Throughout his career, McIntosh has collaborated with notable colleagues, including Joseph M. Blum and Kevin K. Chan. These partnerships have contributed to the advancement of technology in their respective fields.

Conclusion

Robert C. McIntosh is a distinguished inventor whose work in chemical vapor deposition and photolithography has paved the way for advancements in technology. His innovative patents reflect his commitment to improving processes in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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