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For the Inventor, By the Inventor

Hillsborough, CA, United States of America

Robert C Dobkin

USPTO Granted Patents = 22

Average Co-Inventor Count = 1.2

ph-index = 11

Forward Citations = 290(Granted Patents)


Location History:

  • San Mateo, CA (US) (1978)
  • Menlo Park, CA (US) (1976 - 1979)
  • Hillsborough, CA (US) (1978 - 1984)
  • Atherton, CA (US) (1976 - 1985)

Company Filing History:

goldMedal19 out of 4,791 
 
National Semiconductor Corporation
 patents
silverMedal2 out of 6 
 
Hybrinetics, Inc.
 patents
bronzeMedal1 out of 1 
 
Hyrbrinetics, Inc.
 patent

Years Active: 1976-1985

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22 patents (USPTO):Explore Patents
1. 4496963 - Semiconductor device with an ion implanted stabilization layer (1985-01-29),
2. 4447784 - Temperature compensated bandgap voltage reference circuit (1984-05-08),
3. 4410839 - Apparatus for controlling power consumption in lighting loads and the (1983-10-18),
4. 4393575 - Process for manufacturing a JFET with an ion implanted stabilization (1983-07-19),
5. 4378529 - Differential amplifier input stage capable of operating in excess of (1983-03-29),
6. 4371792 - High gain composite transistor (1983-02-01),
7. 4353025 - Phase controlled voltage reducing circuit having line voltage (1982-10-05),
8. 4239986 - Power control arrangement and control circuit especially suitable for (1980-12-16),
9. 4232271 - Instrumentation amplifier with extended common mode range (1980-11-04),
10. 4225878 - Integrated circuit on chip trimming (1980-09-30),
11. 4224564 - Statistical enhancement of the accuracy of a ratio-matched network in a (1980-09-23),
12. 4207481 - Power IC protection by sensing and limiting thermal gradients (1980-06-10),
13. 4176308 - Voltage regulator and current regulator (1979-11-27),
14. 4153909 - Gated collector lateral transistor structure and circuits using same (1979-05-08),
15. 4146903 - System for limiting power dissipation in a power transistor to less than (1979-03-27),

Title: Robert C. Dobkin: A Pioneer in Semiconductor Innovations

Introduction: Robert C. Dobkin, an accomplished inventor residing in Hillsborough, CA, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio consisting of 22 patents, Dobkin's work has revolutionized various aspects of electronic devices, showcasing his ingenuity and commitment to innovation.

Latest Patents: Among his latest inventions, Dobkin developed a semiconductor device with an ion implanted stabilization layer. This innovation enhances surface stabilization through a shallow layer of ion-implanted doping material, effectively improving the performance of bipolar transistors, zener diodes, and JFETs. Another notable patent is his temperature-compensated bandgap voltage reference circuit. The circuit employs a differential amplifier configuration using two transistors running at different current densities, alongside a forward-biased diode, to stabilize the reference voltage against temperature variations.

Career Highlights: Throughout his career, Robert C. Dobkin has worked with prominent companies such as National Semiconductor Corporation and Hybrinetics, Inc. His expertise in semiconductor design and innovation has played a crucial role in advancing the industry's technology and applications.

Collaborations: Dobkin has collaborated with notable colleagues, including James L. Dunkley and Robert A. Pease. These partnerships have enriched his work, driving further advancements in semiconductor technology.

Conclusion: Robert C. Dobkin's dedication to innovation and his plethora of patents underscore his standing as a key figure in the semiconductor industry. His contributions not only enhance device performance but also serve as a foundation for future advancements in electronic technologies.

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