Robert A Owens

Title: The Innovations of Robert A. Owens

Introduction

Robert A. Owens is a notable inventor based in East Amherst, NY (US), recognized for his contributions to the field of lithography and photoresist technology. With a total of six patents to his name, Owens has made significant advancements that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Owens' latest patents include a "Pre-exposure method for increased sensitivity in high contrast resist." This innovative process involves pre-exposing positive resist layers to UV-visible radiation, resulting in a sensitivity increase of 2-4 times compared to untreated samples. This method not only improves throughput during lithographic processing but also minimizes film loss from unexposed resist. Another significant patent is the "High contrast photoresist developer," which features a formulation of aqueous alkali-base and a carboxylated surfactant. This developer enhances the contrast of the photoresist, increasing its gamma from 3 or less to greater than 5. Such improvements allow for better linewidth control and process latitude, which are crucial for defining fine lines on substrates with varying topography.

Career Highlights

Throughout his career, Robert A. Owens has worked with prominent companies such as Allied Corporation and Petrarch Systems. His experience in these organizations has contributed to his expertise in developing advanced lithographic processes and materials.

Collaborations

Owens has collaborated with notable colleagues, including James M. Lewis and Roland L. Chin. These partnerships have likely fostered innovation and the exchange of ideas within the field.

Conclusion

Robert A. Owens stands out as a significant figure in the realm of lithography and photoresist technology. His patents reflect a commitment to enhancing manufacturing processes in the semiconductor industry.