Location History:
- Rahway, NJ (US) (1981)
- Milford, NJ (US) (1983)
Company Filing History:
Years Active: 1981-1983
Title: The Innovative Contributions of Robert A. Friedman
Introduction
Robert A. Friedman is an esteemed inventor based in Rahway, NJ, USA, known for his significant contributions to the field of semiconductor technology. With a total of two patents to his name, Friedman's work exemplifies the spirit of innovation and perseverance. His latest inventions showcase advancements in amorphous silicon semiconductor devices, which are crucial for various applications, particularly in photovoltaic devices.
Latest Patents
Friedman's first notable patent is titled "Sputtered Pin Amorphous Silicon Semi-Conductor Device and Method Therefor." This invention describes a high-efficiency amorphous silicon PIN semiconductor device, constructed through a unique process of sequential sputtering of N, I, and P layers of amorphous silicon. The inclusion of at least one semi-transparent ohmic electrode significantly enhances the physical integrity and simplifies the construction process within a single vacuum system, leading to a streamlined vacuum pump-down procedure.
His second patent focuses on "Gradient Doping in Amorphous Silicon." This innovative approach involves producing an amorphous silicon semiconductor with a gradient doping profile. By thermo-electrically diffusing an ionizable deposit material, such as antimony or aluminum, into the amorphous silicon layer, this method increases the width of the depletion region while ensuring a reliable ohmic contact between the semiconductor and current-carrying electrodes. These advancements have vital implications for the efficiency and effectiveness of photovoltaic devices.
Career Highlights
Friedman has built a notable career at Exxon Research and Engineering Company, where he has conducted groundbreaking research in semiconductor technology. His tenure in this esteemed organization has allowed him to explore innovative solutions in energy-efficient technologies and contribute significantly to the field.
Collaborations
Throughout his career, Robert A. Friedman has collaborated with prominent figures in the research community, including Theodore D. Moustakas and Christopher R. Wronski. These collaborations have fostered an environment of creativity and idea exchange, further enhancing the quality and impact of his work in semiconductor research.
Conclusion
Robert A. Friedman is a pivotal figure in the realm of semiconductor innovations. His patents on amorphous silicon technologies not only demonstrate his expertise as an inventor but also highlight his commitment to advancing the field. As the industry continues to evolve, the significance of his contributions to devices and methods that enhance energy efficiency and functionality will remain influential.