The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1981
Filed:
Dec. 28, 1979
Theodore D Moustakas, Berkeley Heights, NJ (US);
Robert A Friedman, Rahway, NJ (US);
Christopher R Wronski, Princeton, NJ (US);
Exxon Research & Engineering Co., Florham Park, NJ (US);
Abstract
An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, the gradient doping profile increases the width of the depletion or barrier region and concurrently ensures an ohmic contact between amorphous silicon and current carrying electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile