Guangdong, China

Rilin Zhang


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Rilin Zhang: Innovator in LDMOS Technology

Introduction

Rilin Zhang is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on LDMOS devices.

Latest Patents

Rilin Zhang holds a patent for an LDMOS device and its fabrication method. The patent describes a novel approach to arranging various components, including a first field oxide, a second field oxide, a third field oxide, a gate polysilicon, and a gate oxide layer within a trench. This arrangement effectively reduces the lateral dimension of the LDMOS device. Additionally, by optimizing the thickness of the field oxides and the height of the first field oxide, the invention enhances the breakdown voltage resistance of the LDMOS device.

Career Highlights

Rilin Zhang is currently associated with Cansemi Technology Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the performance and reliability of LDMOS devices.

Collaborations

Rilin collaborates with talented colleagues, including Wenhu Liu and Yonghua Zhang, who contribute to the innovative environment at Cansemi Technology Inc.

Conclusion

Rilin Zhang's contributions to LDMOS technology exemplify the spirit of innovation in the semiconductor industry. His patent and ongoing work continue to influence advancements in this critical field.

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