Cansemi Technology Inc.

Rilin Zhang

Wenhu Liu

Yonghua Zhang

The disclosure provides a LDMOS device and a fabrication method. By arranging a first field oxide, a second field oxide, a third field oxide, a gate polysilicon, and a gate oxide layer in the trench and making the surface of the gate polysilicon away from the trench flush with the trench opening, the lateral dimension of the LDMOS device is reduced. Meanwhile, by setting the thickness of the first field oxide and the third field oxide to be greater than that of the second field oxide, setting the height of the first field oxide to be less than or equal to the distance from the bottom of the trench to the channel region, and making the surface of the third field oxide away from the trench flush with the opening of the trench, three independent field plates are formed in the trench. This improves breakdown voltage resistance of the LDMOS device.

Growing community of inventors

Guangdong, China

Rilin Zhang