Toyama, Japan

Riichirou Mitsuhashi

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Panasonic Corporation. Active years: 2011-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Riichirou Mitsuhashi. Retrieved from https://idiyas.com/inventor/riichirou-mitsuhashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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2 patents (USPTO):Explore Patents

Title: Riichirou Mitsuhashi: Semiconductor Device Inventor

Introduction

Riichirou Mitsuhashi is an inventor associated with Toyama, Japan, and Panasonic Corporation. His work includes semiconductor devices and methods for fabricating them. The supplied information lists 2 patents.

Latest Patents

The latest patent information provided describes a semiconductor device containing two transistors formed in a semiconductor substrate. Each transistor has a gate insulating film and a gate electrode. The first gate insulating film contains a diffused element in an amount greater than that in the second gate insulating film, while both films include the same first insulating material. The invention also concerns a method for fabricating the device.

The supplied data gives the same patent description twice, so it is presented here as one distinct description.

Career Highlights

Mitsuhashi is associated with Panasonic Corporation, a company whose work includes semiconductor technologies. His listed patent activity focuses on transistor structures and the composition of gate insulating films.

Collaborations

Takayuki Yamada is identified as Mitsuhashi’s coworker. The information provided does not specify their particular projects or contributions.

Conclusion

Riichirou Mitsuhashi’s listed work centers on semiconductor devices and fabrication methods, including transistor gate-insulator designs, in connection with Panasonic Corporation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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