This inventor holds 1 USPTO granted patent. Top assignee: China Academy of Space Technology. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Rigen Mo and SiC MOSFET Radiation Testing
Introduction
Rigen Mo is an inventor based in Beijing, China, associated with the China Academy of Space Technology. His work includes a patent for testing the total dose effects of silicon carbide (SiC) MOSFET devices, which are relevant to electronics designed for radiation environments.
Latest Patents
Mo is named on 1 patent: “Method for Testing Total Dose Effect of SiC MOSFET Device.” The method evaluates a device before and after irradiation, with annealing treatments performed both before and after irradiation. It analyzes the test results to distinguish threshold-voltage shifts caused by radiation-induced defects from shifts associated with near-interface trap charges. This approach supports assessment of the device’s resistance to total-dose radiation effects and can help guide device hardening.
Career Highlights
Mo’s patent focuses on a structured testing process for characterizing SiC MOSFET performance under total-dose radiation exposure. The method combines measurements and analysis to provide a more comprehensive evaluation of radiation-related threshold-voltage changes.
Collaborations
The supplied information identifies Qingkui Yu and He Wang as Mo’s coworkers. It does not specify their roles in the patent or describe particular collaborative projects.
Conclusion
Rigen Mo’s patent presents a method for evaluating total-dose radiation effects in SiC MOSFET devices, contributing a practical approach to device characterization and radiation-hardening assessment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile