Milton, MA, United States of America

Richard Traczewski

This inventor holds 1 USPTO granted patent. Top assignee: Raytheon Company. Active years: 1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Traczewski. Retrieved from https://idiyas.com/inventor/richard-traczewski

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1986

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1 patent (USPTO):Explore Patents

Title: Richard Traczewski: Innovator in Semiconductor Technology

Introduction

Richard Traczewski is a notable inventor based in Milton, MA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in epitaxial growth.

Latest Patents

Traczewski holds a patent for the "Metalorganic vapor phase epitaxial growth of group II-VI semiconductor." This patent describes a method for growing a Group II-VI epitaxial layer on a substrate. The epitaxial layer boasts an electron mobility greater than 1.5×105 cm2/V-sec at 77° K and a carrier concentration of less than 4×1015 (cm-3). The method involves directing multiple vapor flows towards the substrate, including a Group II metalorganic vapor and a Group VI metalorganic vapor, among others.

Career Highlights

Traczewski is currently employed at Raytheon Company, where he continues to apply his expertise in semiconductor technologies. His work has been instrumental in advancing the capabilities of electronic devices.

Collaborations

Some of his notable coworkers include William E. Hoke and Peter J. Lemonias, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Richard Traczewski's contributions to semiconductor technology through his innovative patent demonstrate his significant role in the industry. His work continues to influence advancements in electronic devices and materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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