Milpitas, CA, United States of America

Richard Todd Owen

This inventor holds 1 USPTO granted patent. Top assignee: Renesas Electronics America Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Todd Owen. Retrieved from https://idiyas.com/inventor/richard-todd-owen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Richard Todd Owen: Innovator in Source/Sink LDO Technology

Introduction

Richard Todd Owen is a notable inventor based in Milpitas, CA (US). He has made significant contributions to the field of electronics, particularly in the development of low-dropout regulators (LDOs). His innovative approach has led to advancements that enhance the performance of electronic devices.

Latest Patents

Richard Todd Owen holds a patent for a "Source/sink LDO with reduced dead band." This invention features a pre-amplifier that amplifies an error voltage, which is the difference between an output voltage and a reference voltage. The pre-amplification effectively reduces the dead band for the source/sink LDO by the gain of the pre-amplifier, thereby improving its efficiency and responsiveness.

Career Highlights

Richard Todd Owen is currently employed at Renesas Electronics America Inc. His work at this leading company in semiconductor solutions has allowed him to apply his innovative ideas in practical applications, contributing to the advancement of technology in the industry.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Richard Todd Owen's contributions to the field of electronics, particularly through his patent on source/sink LDO technology, highlight his role as an influential inventor. His work continues to impact the efficiency of electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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