Carmel, NY, United States of America

Richard P McGouey


Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 57(Granted Patents)


Location History:

  • Mahopac, NY (US) (1976)
  • Brewster, NY (US) (1981)
  • Carmel, NY (US) (1992 - 1996)

Company Filing History:


Years Active: 1976-1996

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):

Title: Richard P. McGouey: A Trailblazer in Dielectric Structures and Photoresist Technologies

Introduction

Richard P. McGouey, an accomplished inventor based in Carmel, NY, has made significant contributions to the field of electronic materials through his innovative work. With a total of five patents to his name, McGouey continues to push the boundaries of technology and materials science.

Latest Patents

Among his noteworthy patents is the invention of **Dielectric structures having embedded gap filling RIE etch stop**. This groundbreaking technology features structures containing a dielectric material with a polymeric reactive ion etch barrier embedded within. The preferred dielectric materials in this invention are polymers, specifically polyimide materials. The reactive ion etch (RIE) barrier is a carefully designed copolymer that includes an aromatic component known for its high thermal stability, alongside a cross-linking component selected from metallacyclobutane, metallabutene, and vinyl groups. This etch barrier is deposited as a solvent-free liquid capable of filling gaps between the dielectric material and the embedded electrical conductors. Once cured, the liquid polymer becomes a solid, insoluble state, making these structures highly valuable for electronic applications.

Another key patent from McGouey is the **Base developable negative photoresist composition and use thereof**. This composition includes novolak polymer and/or poly(p-vinylphenol), along with an organometallic material, an amino polymer, and a cationic photocatalyst. Additionally, it may incorporate a cosensitizer material that enhances the sensitivity of the composition to near UV radiation. This innovative composition showcases McGouey's ability to design materials that advance photolithography in electronic manufacturing.

Career Highlights

Currently, Richard P. McGouey is associated with the **International Business Machines Corporation (IBM)**, a global leader in technology and innovation. His work at IBM highlights his dedication to optimizing materials for electronic applications, showcasing his engineering prowess and forward-thinking mindset.

Collaborations

Throughout his career, McGouey has collaborated with other talented professionals, including esteemed coworkers Edward D. Babich and Sharon L. Nunes. Together, they have contributed to the development of advanced materials that are critical for the electronics industry, exemplifying the importance of teamwork in innovation.

Conclusion

Richard P. McGouey's contributions to the fields of dielectric materials and photoresist technology have set him apart as a significant figure in innovation. His patents reflect a deep understanding of material science and highlight his role in shaping future technologies. With continued collaboration and research, McGouey is sure to remain a pivotal player in the advancement of electronic applications.

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