International Business Machines Corporation

Richard P McGouey

Edward D Babich

Jurij R Paraszczak

Sharon L Nunes

Jane M Shaw

Michael Hatzakis

Jeffrey Donald Gelorme

Eileen Ann Galligan

George E Keefe

David F Witman

Yeong S Lin

George S Almasi

Russell J Serino

Robert J Hendel

Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.

Dielectric structures having embedded gap filling RIE etch stop

A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.

Base developable negative photoresist composition and use thereof

A technique and structure is described in which bubble domain devices can be made, and particularly bubble domain devices comprisng contiguous propagation elements. A thin magnetoresistive layer, such as permalloy, is blanket deposited over a substrate including a bubble domain film, and is then selectively 'poisoned' to destroy its magnetization except in those areas where thin sensors are to be provided. The poisoned portions of the magnetoresistive layer serve as a plating base for conductor metallurgy which can be used as an ion implantation mask, and for carrying electrical current. This eliminates some process steps which had been required in the prior art, and does not leave magnetic permalloy in those areas of the bubble domain chip were they would adversely affect propagation of domains by ion implanted contiguous propagation elements. This technique can also be used to make bubble domain devices having gapped propagation elements.

Patterned kill of magnetoresistive layer in bubble domain chip

A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The proces makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all condutors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.

Method for making high density magnetic bubble domain system

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Carmel, NY, United States of America

Richard P McGouey