Richard L Lichtel

Title: Richard L Lichtel: Innovator in SOI CMOS Technology

Introduction

Richard L Lichtel is a notable inventor based in Corrales, NM (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of SOI CMOS devices. His innovative approach has led to advancements that enhance the performance and reliability of these devices.

Latest Patents

Lichtel holds a patent for an SOI CMOS device having a body extension for providing a sidewall channel. This invention features an SOI/SOS thin film MOS mesa architecture, where the body/channel region is extended beyond the source and drain regions. The impurity concentration is increased at a selected portion of the extended body region, allowing for a body tie access location that enables the body/channel region to be terminated to a prescribed bias voltage. Additionally, it includes a channel stop region that effectively interrupts a current leakage path or parasitic N-channel that may be induced along the sidewall surface of the P-type material of the body/channel region.

Career Highlights

Throughout his career, Lichtel has focused on enhancing semiconductor technologies. His work has been instrumental in addressing challenges related to current leakage and device reliability. His innovative designs have paved the way for more efficient and effective semiconductor devices.

Collaborations

Lichtel has collaborated with notable colleagues, including Richard D Cherne and Jack E Clark, II. These partnerships have contributed to the advancement of technology in the semiconductor field.

Conclusion

Richard L Lichtel's contributions to SOI CMOS technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a commitment to improving device performance and reliability, marking him as a significant figure in the field.