Richard H Egloff

Title: Richard H Egloff: Innovator in Semiconductor Technology

Introduction

Richard H Egloff is a notable inventor based in Yonkers, NY (US), recognized for his contributions to semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to improving electronic devices.

Latest Patents

One of his latest patents is a method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET). This invention provides a method for applying an oxide layer to a silicon carbide substrate, enhancing the oxide-substrate interface of the resulting SiC MOSFET. The method includes forming the oxide layer in the presence of metallic impurities. Another significant patent involves a lateral thin-film Silicon-On-Insulator (SOI) device that features a lateral drift region with a retrograde doping profile. This device includes a semiconductor substrate, a buried insulating layer, and a lateral transistor device designed to improve breakdown voltage and reduce "on" resistance.

Career Highlights

Richard has worked with prominent companies such as Philips Electronics North America Corporation and Koninklijke Philips Corporation N.V. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Throughout his career, Richard has collaborated with notable individuals, including Theodore James Letavic and Mark Simpson. These collaborations have likely enriched his work and led to significant advancements in his field.

Conclusion

Richard H Egloff's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced electronic devices.