The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
May. 18, 1998
Applicant:
Inventor:
Richard Egloff, Yorktown Heights, NY (US);
Assignee:
Philips Electronics North America Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438406 ; 438522 ; 438526 ; 438530 ;
Abstract
Thin layers of semiconductor material having a high degree of surface uniformity are produced by: implantion of deuterium ions into a body of semiconductor material to form a buried region of high stress, the buried region defining a thin outer region of the body; attaching a stiffening carrier to the thin outer region of the semiconductor body; and heating the body at 350-450 degrees C. to separate the thin outer region. The separated layer is useful in the production of silicon-on-insulator semiconductor devices, and silicon-on-glass devices for liquid crystal display and microwave applications.