This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf Semiconducteurs Specifiques. Active years: 1996.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1996
Title: Richard Ferrant: Innovator in Memory Technology
Introduction
Richard Ferrant is a notable inventor based in Carrollton, TX (US). He has made significant contributions to the field of memory technology, particularly with his innovative designs that enhance the reliability of memory cells.
Latest Patents
Ferrant holds a patent for a memory cell that is insensitive to disturbances. This invention addresses the challenges faced by traditional memory cells, which can be affected by external disturbances. The memory cell contains information in the form of two complementary logical levels (X, C(X)), each stored in a node of the cell (N1, N2). It is characterized by its ability to store the same logical level in two different nodes (N1, N2, N3, N4). This design allows the memory cell to restore any logical level to its initial state after a disturbance, ensuring data integrity.
Career Highlights
Richard Ferrant is currently employed at Thomson-Csf Semiconducteurs Specifiques, where he continues to develop innovative memory technologies. His work has been instrumental in advancing the capabilities of memory cells, making them more robust and reliable.
Collaborations
Ferrant collaborates with his coworker, Thierry Masson, to further enhance their research and development efforts in memory technology.
Conclusion
Richard Ferrant's contributions to memory technology through his innovative patent demonstrate his commitment to advancing the field. His work not only addresses current challenges but also paves the way for future developments in memory systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile