Riccardo De Petro

Title: The Innovations of Riccardo De Petro: A Pioneer in MOSFET Technology

Introduction

Riccardo De Petro is an accomplished inventor based in Domodossola, Italy. Known for his significant contributions to the field of semiconductor technology, he holds a patent that emphasizes his expertise and innovation in high voltage MOSFET transistors.

Latest Patents

One of Riccardo's notable patents is titled "Process for fabricating a high voltage MOSFET." This invention describes a high-voltage lateral MOSFET transistor structure composed of various interdigitated modular elements formed on a layer of monocrystalline silicon. The fabrication process outlined in the patent aims to save silicon area and reduce the specific resistivity, RDS(on), by strategically implanting doping material in the silicon through apertures in the field oxide. This technique utilizes selective anisotropic etching, employing strips of polycrystalline silicon as masks which serve as gate electrodes and field electrodes.

Career Highlights

Riccardo has dedicated his career to advancing semiconductor technology. He is currently employed at STMicroelectronics S.r.l., a leading global semiconductor company where he has been able to leverage his skills and knowledge to contribute to groundbreaking technology solutions.

Collaborations

Throughout his career, Riccardo has worked with talented individuals in the field, including his coworkers Paola Galbiati and Michele Palmieri. Their collaborative efforts have fostered an environment of innovation and creativity, leading to the development of transformative technologies in the semiconductor industry.

Conclusion

Riccardo De Petro's contributions to the MOSFET technology sector exemplify the power of innovation and the impact of dedicated inventors in the industry. His patent demonstrates not only his ingenuity but also the importance of collaboration in achieving remarkable advancements in technology.