The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Feb. 04, 1998
Applicant:
Inventors:
Riccardo De Petro, Domodossola, IT;
Paola Galbiati, Monza, IT;
Michele Palmieri, Bitonto, IT;
Claudio Contiero, Buccinasco, IT;
Assignee:
STMicroelectronics, S.r.l., Agrate Brianza, IT;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438180 ; 438225 ; 438297 ; 438294 ; 438229 ; 438514 ; 257333 ; 257341 ;
Abstract
A high-voltage lateral MOSFET transistor structure constituted by various interdigitated modular elements formed on a layer of monocrystaline silicon is described together with a process for its fabrication. To save area of silicon and to reduce the specific resistivity RDS on doping drain regions are formed by implanting doping material in the silicon through apertures in the field oxide obtained with a selective anisotropic etching by utilizing as a mask the strips of polycrystaline silicon which serve as gate electrodes and field electrodes.