Changchun, China

Renguo Xie

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: University of Arkansas. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Renguo Xie. Retrieved from https://idiyas.com/inventor/renguo-xie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Renguo Xie: Innovator in Semiconductor Nanocrystals

Introduction: Renguo Xie is a prominent inventor based in Changchun, China. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of metal-doped semiconductor nanocrystals, which have various applications in electronics and optoelectronics.

Latest Patents: Renguo Xie holds a patent for "Metal doped semiconductor nanocrystals and methods of making the same." This innovation provides methods for creating doped semiconductor nanocrystals, which are essential for enhancing the performance of electronic devices. He has 1 patent to his name, showcasing his expertise in this specialized area.

Career Highlights: Renguo Xie is affiliated with the University of Arkansas, where he continues to advance research in semiconductor materials. His academic background and research initiatives have positioned him as a key figure in the field of nanotechnology.

Collaborations: Renguo Xie has collaborated with Xiaogang Peng, a fellow researcher, to further explore the potential of semiconductor nanocrystals. Their joint efforts contribute to the ongoing advancements in this innovative field.

Conclusion: Renguo Xie's work in metal-doped semiconductor nanocrystals exemplifies the impact of innovative research on technology. His contributions are paving the way for future developments in electronics and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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