Ebermannstadt, Germany

Reimer Emeis

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1977.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Reimer Emeis. Retrieved from https://idiyas.com/inventor/reimer-emeis

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1977

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1 patent (USPTO):Explore Patents

Title: Reimer Emeis: Innovator in Semiconductor Technology

Introduction

Reimer Emeis is a notable inventor based in Ebermannstadt, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Reimer Emeis holds a patent for an "Apparatus for indiffusing dopants into semiconductor material." This apparatus is designed to enhance the process of doping semiconductor materials, which is crucial for the development of electronic components. The apparatus features a heatable tube made from the same semiconductor material, with a wall thickness ranging from 0.5 to 20 mm, ensuring it is gas-tight under reaction conditions.

Career Highlights

Emeis is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to focus on advancing semiconductor technologies, contributing to the company's reputation for innovation in the electronics sector.

Collaborations

Throughout his career, Reimer Emeis has collaborated with esteemed colleagues, including Konrad Reuschel and Wolfgang Keller. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Reimer Emeis stands out as an influential inventor in the semiconductor industry, with a patent that showcases his innovative approach to technology. His contributions continue to impact the field, reflecting the importance of innovation in advancing electronic materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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