Reginald C Oldfield

Title: Reginald C Oldfield: Innovator in Bipolar Semiconductor Devices

Introduction

Reginald C Oldfield is a notable inventor based in Caterham, GB. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in bipolar semiconductor devices. His work has implications for improving the performance and reliability of electronic components.

Latest Patents

Oldfield holds a patent for a bipolar semiconductor device with implanted recombination regions. This invention features interdigitated emitter and base regions, where a sub-region of the base has a shorter carrier recombination time than the major part of the base region. This is achieved through argon ion implantation, which induces carrier recombination centers. The design aims to enhance the device's performance during turn-off, promoting the collapse of transient currents and preventing second breakdown. The patent details the implantation process, including energy levels and doses, which can be tailored to optimize the device's functionality.

Career Highlights

Oldfield has worked with U.S. Philips Corporation, where he has been instrumental in advancing semiconductor technology. His expertise in bipolar devices has positioned him as a key figure in the industry, contributing to the development of more efficient electronic components.

Collaborations

Oldfield has collaborated with notable colleagues, including Carole A Fisher and David H Paxman. Their combined efforts have furthered research and innovation in semiconductor technology.

Conclusion

Reginald C Oldfield's contributions to bipolar semiconductor devices highlight his role as an innovator in the field. His patent reflects a deep understanding of semiconductor physics and a commitment to enhancing electronic device performance.