Rebecca Shen

Title: Innovations by Rebecca Shen in X-ray Scatterometry

Introduction

Rebecca Shen is an accomplished inventor based in Santa Clara, CA. She has made significant contributions to the field of semiconductor measurements, particularly through her innovative patent. Her work focuses on enhancing the efficiency of X-ray scatterometry measurements, which are crucial for analyzing semiconductor structures.

Latest Patents

Rebecca Shen holds a patent titled "Forward library based seeding for efficient X-ray scatterometry measurements." This patent describes methods and systems for performing X-ray model-based scatterometry measurements of semiconductor structures with reduced computational effort. The process involves transforming measured detector image data into diffraction order efficiency data. This data is then compared with a parameter-efficiency library that includes simulated diffraction order efficiency data and associated sets of specimen parameter values. By selecting one or more sets of specimen parameter values as seed values for regression, the method enables the image-based regression to converge to the global minimum with significantly fewer iterations. This innovation allows for accurate X-ray scatterometry measurements of complex semiconductor structures while minimizing computational demands.

Career Highlights

Rebecca Shen is currently employed at Kla Corporation, where she continues to advance her research and development efforts in semiconductor technology. Her work has been instrumental in improving measurement techniques that are vital for the semiconductor industry.

Collaborations

Rebecca collaborates with talented colleagues, including Naga Venkata Lakshmi Sandeep Inampudi and Boxue Chen. Their combined expertise contributes to the innovative environment at Kla Corporation.

Conclusion

Rebecca Shen's contributions to X-ray scatterometry represent a significant advancement in semiconductor measurement techniques. Her innovative patent showcases her commitment to enhancing efficiency in this critical field.