Catharpin, VA, United States of America

Raymond W Hamaker


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 67(Granted Patents)


Location History:

  • Catharpin, VA (US) (1978 - 1981)
  • Gilroy, CA (US) (1983)

Company Filing History:


Years Active: 1978-1983

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4 patents (USPTO):Explore Patents

Title: The Innovations of Raymond W. Hamaker

Introduction

Raymond W. Hamaker, based in Catharpin, VA, has made significant contributions to the field of electronics through his innovative inventions. With a portfolio of four patents, Hamaker has focused on enhancing the performance and efficiency of bipolar transistor structures, which are critical in various electronic applications.

Latest Patents

One of Hamaker's latest patents addresses a fabrication method for a vertical PNP structure with a Schottky barrier. This innovative design simplifies the construction of a complementary PNP in an NPN integrated circuit, thus improving the speed and density of the vertical PNP. The inclusion of a Schottky contact for the PNP emitter allows for a more efficient structure, where the PNP base doping profile effectively intercepts the PNP collector profile with lower concentration. This advancement results in reduced collector/base capacitance, lower series collector resistance, and higher breakdown voltage, thereby enhancing frequency response.

Another notable patent focuses on dense dry etched multi-level metallurgy with non-overlapped vias. This invention pertains to a double level metal interconnection structure and the associated process for its creation. The use of an etch-stop layer made of chromium aids in preventing over-etching during the formation of the second-level metal line, improving manufacturing precision and efficiency through reactive plasma etching techniques.

Career Highlights

Much of Hamaker's work has been carried out at the International Business Machines Corporation (IBM), a company renowned for its innovation in technology and computing. His patents demonstrate his commitment to advancing electronic circuit design, particularly in enhancing bipolar transistor performance.

Collaborations

Throughout his career, Hamaker has collaborated with notable colleagues such as Geoffrey B. Stephens and George E. Alcorn. These professional relationships have likely fostered an environment of innovation, enhancing the development of groundbreaking technologies within the field.

Conclusion

Raymond W. Hamaker's contributions to the field of electronics through his patents reflect a deep commitment to innovation. His work not only enhances the functionality of electronic devices but also sets the stage for further advancements in semiconductor technology. As a distinguished inventor, Hamaker's legacy continues to influence the evolution of electronic design, paving the way for future innovations.

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