The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1983
Filed:
Mar. 05, 1982
David E De Bar, Manassas, VA (US);
Raymond W Hamaker, Gilroy, CA (US);
Geoffrey B Stephens, Cary, NC (US);
IBM Corporation, Armonk, NY (US);
Abstract
A vertical PNP bipolar transistor structure with Schottky Barrier diode emitter is disclosed which simplifies the structure and process steps for combining a complementary PNP in an NPN integrated circuit and improves the speed and density of the vertical PNP. The PNP emitter is formed with a Schottky contact such that only the PNP base region is contained in the NPN emitter junction structure. The structure uses a separately masked ion/implant for the NPN intrinsic base implant which also forms the PNP collector region so that the PNP base doping profile can intercept the PNP collector profile at a lower concentration resulting in lower collector/base capacitance, lower series collector resistance and higher collector/base breakdown voltage for the PNP. Since the base doping concentration is lower in the structure and the emitter has no sidewall capacitance, the PNP emitter-base capacitance is greatly reduced. These features result in an improved frequency response for the PNP structure.