Milford, CT, United States of America

Raymond F Graves

This inventor holds 1 USPTO granted patent. Top assignee: Jet Process Corporation. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raymond F Graves. Retrieved from https://idiyas.com/inventor/raymond-f-graves

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Innovations of Raymond F Graves

Introduction

Raymond F Graves is an accomplished inventor based in Milford, CT (US). He has made significant contributions to the field of vapor deposition technology. His innovative methods have paved the way for advancements in material film applications.

Latest Patents

Graves holds a patent for a "Method for hydrogen atom assisted jet vapor deposition for parylene N." This method presents a novel approach for the vapor deposition of a material film upon a substrate. The process utilizes a Jet Vapor Deposition technique with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas, which consists of a carrier gas and a vaporized polymer such as Parylene, impinges upon the substrate through a port, forming the material film.

Career Highlights

Graves is associated with Jet Process Corporation, where he applies his expertise in vapor deposition technologies. His work has been instrumental in enhancing the efficiency and effectiveness of material film applications.

Collaborations

Graves collaborates with Bret L Halpern, contributing to the development of innovative solutions in their field.

Conclusion

Raymond F Graves continues to be a pivotal figure in the realm of vapor deposition technology, with his patented methods showcasing his innovative spirit and dedication to advancing material science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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