Ortonville, MI, United States of America

Raymond F Bis

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Dow Global Technolgoies LLC. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raymond F Bis. Retrieved from https://idiyas.com/inventor/raymond-f-bis

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Inventor Raymond F Bis: Pioneering Innovations in Ortonville

Introduction: Raymond F Bis is a distinguished inventor based in Ortonville, Michigan, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Raymond F Bis holds several patents in the areas of technology, healthcare, and consumer products, showcasing his versatility and ingenuity in inventing solutions for everyday challenges.

Career Highlights: Throughout his illustrious career, Raymond F Bis has consistently pushed the boundaries of innovation, with his inventions gaining recognition for their practicality and impact on society. His dedication to creating novel solutions has earned him a reputation as a visionary inventor.

Collaborations: Raymond F Bis has collaborated with leading companies, research institutions, and universities to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking products.

Conclusion: In conclusion, Raymond F Bis stands as a testament to the power of innovation and creativity in driving positive change. His passion for inventing, coupled with his technical expertise, continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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