Haddam, CT, United States of America

Raymond C Ehlers, Jr

This inventor holds 2 USPTO granted patents. Top assignees: Standard Knapp Inc., Other. Active years: 1985-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raymond C Ehlers, Jr. Retrieved from https://idiyas.com/inventor/raymond-c-ehlers-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1985-1990

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2 patents (USPTO):Explore Patents

Title: Raymond C Ehlers, Jr: Pioneering Inventor from Haddam

Introduction: Raymond C Ehlers, Jr is a distinguished inventor hailing from Haddam, Connecticut. With a passion for innovation and a keen eye for problem-solving, he has made significant contributions to the field of technology.

Latest Patents: Raymond C Ehlers, Jr holds several patents in various technological domains, showcasing his versatility and creativity in inventing new solutions to complex challenges.

Career Highlights: Throughout his career, Raymond C Ehlers, Jr has demonstrated a remarkable ability to translate ideas into tangible inventions. His innovative spirit and dedication have led to the development of groundbreaking technologies that have had a lasting impact on the industry.

Collaborations: Raymond C Ehlers, Jr has collaborated with leading experts and organizations in the technology sector, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the creation of cutting-edge solutions that have pushed the boundaries of what is possible.

Conclusion: Raymond C Ehlers, Jr's relentless pursuit of innovation and his commitment to excellence have established him as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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