Almaty, Kazakhstan

Raushan G Sarmurzina

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1980.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raushan G Sarmurzina. Retrieved from https://idiyas.com/inventor/raushan-g-sarmurzina

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal1 out of 834,659 
Other
 patents

Years Active: 1980

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1 patent (USPTO):Explore Patents

Title: Raushan G Sarmurzina: Innovator in Aluminum-base Alloys

Introduction

Raushan G Sarmurzina is a notable inventor based in Alma-Ata, SU. She has made significant contributions to the field of materials science, particularly in the development of aluminum-base alloys.

Latest Patents

Raushan holds a patent for an aluminum-base alloy used as a material for galvanic protectors. This innovative alloy consists essentially of about 0.005 to about 3.5 weight percent gallium, about 0.1 to about 1.0 weight percent magnesium, with the balance being essentially aluminum. This invention showcases her expertise in creating materials that enhance the performance and longevity of galvanic protection systems.

Career Highlights

Throughout her career, Raushan has demonstrated a commitment to advancing material technology. Her work has not only contributed to academic knowledge but has also practical applications in various industries.

Collaborations

Raushan has collaborated with notable professionals in her field, including Evgeny G Lukin and Jury D Dunaev. These partnerships have allowed her to expand her research and innovate further in her area of expertise.

Conclusion

Raushan G Sarmurzina is a pioneering inventor whose work in aluminum-base alloys has the potential to impact various industries positively. Her contributions to material science are commendable and reflect her dedication to innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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