Bengaluru, India

Ranjan Mr

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Siemens Aktiengesellschaft. Active years: 2022.


% Patents Active = 100.0

 

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Ranjan Mr: Innovator in Alarm Management Systems

Introduction

Ranjan Mr is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of alarm management systems. His innovative approach has led to the development of a unique patent that addresses critical issues in technical installations.

Latest Patents

Ranjan holds a patent titled "Method, apparatus, and system for managing alarms." This invention provides a comprehensive solution for detecting faults in alarm systems. The method includes invoking a proxy of the faulty alarm system upon detecting a fault condition. The proxy is designed to perform the functions of the faulty system, ensuring that alarm conditions are processed and communicated effectively. This innovation enhances the reliability of alarm systems in technical installations.

Career Highlights

Ranjan is currently employed at Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to collaborate with other talented professionals in the field. His contributions have been instrumental in advancing alarm management technologies.

Collaborations

Ranjan has worked alongside notable colleagues such as Manivannan K and Pragnyasini Panigrahi. Their collaborative efforts have fostered an environment of innovation and creativity within their projects.

Conclusion

Ranjan Mr is a distinguished inventor whose work in alarm management systems has made a significant impact. His patent demonstrates his commitment to improving safety and reliability in technical installations. Through his career at Siemens, he continues to push the boundaries of innovation in this essential field.

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