Ranier Florian Schnabel

Title: The Innovations of Ranier Florian Schnabel

Introduction

Ranier Florian Schnabel is a notable inventor based in Höhenkirchen, Germany. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. His innovative work has led to the development of a unique patent that enhances the efficiency of memory chips.

Latest Patents

Ranier Schnabel holds a patent for a dynamic random access memory. This invention involves a DRAM formed in a silicon chip that includes a support area with support circuitry. The memory features a single electrical contact through two dielectric layers to a conductive layer of a gate stack of a field effect support transistor. This design includes a capping layer through which the electrical contact passes to the gate. The memory area contains an array of memory cells, each including a field effect transistor. The innovative aspect of this patent is that it saves a processing step over prior art processes by forming the second electrical contacts concurrently with the single electrical contact to the gate of the support transistor.

Career Highlights

Ranier Schnabel is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to focus on advancing memory technology and contributing to the company's innovative projects.

Collaborations

One of his notable coworkers is Ulrike Gruening, with whom he collaborates on various projects within the company.

Conclusion

Ranier Florian Schnabel's contributions to DRAM technology exemplify the innovative spirit of modern inventors. His patent not only showcases his expertise but also reflects the ongoing advancements in semiconductor technology.