Windermere, FL, United States of America

Randolph H Burton

This inventor holds 1 USPTO granted patent. Top assignee: Lucent Technologies Inc.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Randolph H Burton. Retrieved from https://idiyas.com/inventor/randolph-h-burton-crmlss86

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2000

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Randolph H. Burton: Semiconductor Wafer Planarization Inventor.

Introduction

Randolph H. Burton is an inventor associated with Windermere, Florida, and Lucent Technologies Inc. His work includes a patented method for planarizing metal-containing surfaces on semiconductor wafers.

Latest Patents

Burton is credited with 1 patent: “Method of Planarizing a Surface on a Semiconductor Wafer.” The invention describes selecting a slurry containing an abrasive and an oxidant capable of oxidizing the metal on the wafer. By altering a property of the slurry, the method reduces the metal’s exposure to the oxidant and slows oxidation. The abrasive then removes the resulting metal oxide to produce a planarized wafer surface.

Career Highlights

Burton’s patent addresses a semiconductor manufacturing process in which controlling oxidation and removing surface material are used to achieve planarization. His work is associated with Lucent Technologies Inc.

Collaborations

The supplied information identifies Yaw S. Obeng and Laurence D. Schultz as Burton’s coworkers. It does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Randolph H. Burton’s recorded patent focuses on controlling oxidation during semiconductor wafer planarization, reflecting his contribution to a key manufacturing process.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…