This inventor holds 4 USPTO granted patents. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1979-1981.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1979-1981
Title: Randolph E. Longshore: Semiconductor Device Inventor.
Introduction
Randolph E. Longshore is an inventor associated with Alexandria, Virginia. His work includes semiconductor devices and methods for manufacturing planar diode structures. He is credited with 4 patents.
Latest Patents
Longshore’s listed patents include “Method of Manufacture of Photodiode,” which describes forming planar photodiodes by diffusing lead into p-type Pb₀.₈Sn₀.₂Te single-crystal material.
His “Planar Indium Antimonide Diode Array and Method of Manufacture” describes forming a planar diode array by diffusing cadmium from an indium-cadmium alloy through a silicon diode mask into bulk indium antimonide.
Career Highlights
Longshore’s patent work concerns semiconductor fabrication, including processes for producing photodiodes and planar diode arrays. He is associated with the U.S. Government as represented by the Secretary of the Army.
Collaborations
His listed coworkers include John T. Cox and Marilyn A. Jasper.
Conclusion
Randolph E. Longshore’s recorded inventions focus on manufacturing semiconductor diode structures, reflecting his contributions to photodiode and indium antimonide array technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile