Lyon, France

Régis Hamelin

This inventor holds 1 USPTO granted patent. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2004.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Régis Hamelin

Introduction

Régis Hamelin is a notable inventor based in Lyons, France. He has made significant contributions to the field of image sensing technology. His work focuses on enhancing the performance of matrix sensors through innovative methods.

Latest Patents

Régis Hamelin holds a patent for a method of biasing the photodiodes of a matrix sensor through associated pixels. This patent, titled "Method of biasing the photodiodes of a matrix sensor through associated pixels thereof," describes an image sensor that includes a detector circuit with detector diodes. These diodes are reverse biased during image sensing. The innovation lies in controlling the cathode voltage of the detector diodes by forward biasing circuit diodes via the read circuit. The control diodes can either be dedicated diodes or forward biased photodetector diodes, allowing for image capture in several sequences.

Career Highlights

Régis Hamelin is associated with the Commissariat à l'Énergie Atomique, where he continues to develop and refine his inventions. His work has contributed to advancements in the field of image sensors, making them more efficient and effective.

Collaborations

Régis has collaborated with notable colleagues such as Philippe Pantigny and Jean-Luc Martin. Their combined expertise has fostered a productive environment for innovation and development in their projects.

Conclusion

Régis Hamelin's contributions to image sensing technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of more efficient imaging systems.

Profile summary based on public USPTO records.
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